SQ1470EH-T1-GE3

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Overview of SQ1470EH-T1-GE3

Part NumberSQ1470EH-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 2.8A SC70
DatasheetsDownload SQ1470EH-T1-GE3 Datasheet PDFPDF Icon
Price for SQ1470EH-T1-GE3

Specification of SQ1470EH-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
65mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363

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