SQ1912AEEH-T1_GE3

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Overview of SQ1912AEEH-T1_GE3

Part NumberSQ1912AEEH-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 20V POWERPAK SC70-6
DatasheetsDownload SQ1912AEEH-T1_GE3 Datasheet PDFPDF Icon
Price for SQ1912AEEH-T1_GE3

Specification of SQ1912AEEH-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
800mA (Tc)
Rds On (Max) @ Id, Vgs
280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
1.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
27pF @ 10V
Power - Max
1.5W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6

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