SQ2364EES-T1_BE3

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Overview of SQ2364EES-T1_BE3

Part NumberSQ2364EES-T1_BE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 60-V (D-S) 175C MOSFET
DatasheetsDownload SQ2364EES-T1_BE3 Datasheet PDFPDF Icon
Price for SQ2364EES-T1_BE3

Specification of SQ2364EES-T1_BE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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