SQ3442EV-T1-GE3

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Overview of SQ3442EV-T1-GE3

Part NumberSQ3442EV-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 4.3A 6TSOP
DatasheetsDownload SQ3442EV-T1-GE3 Datasheet PDFPDF Icon
Price for SQ3442EV-T1-GE3

Specification of SQ3442EV-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
55mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
405 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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