SQ4080EY-T1_BE3

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Overview of SQ4080EY-T1_BE3

Part NumberSQ4080EY-T1_BE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 150-V (D-S) 175C MOSFE
DatasheetsDownload SQ4080EY-T1_BE3 Datasheet PDFPDF Icon
Price for SQ4080EY-T1_BE3

Specification of SQ4080EY-T1_BE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1590 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
7.1W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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