SQ4946EY-T1-E3

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Overview of SQ4946EY-T1-E3

Part NumberSQ4946EY-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 60V 4.5A 8SOIC
DatasheetsDownload SQ4946EY-T1-E3 Datasheet PDFPDF Icon
Price for SQ4946EY-T1-E3

Specification of SQ4946EY-T1-E3

Status
Obsolete
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
4.5A
Rds On (Max) @ Id, Vgs
55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2.4W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC

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