SQD10N30-330H_4GE3

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Overview of SQD10N30-330H_4GE3

Part NumberSQD10N30-330H_4GE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 300-V (D-S) 175C MOSFE
DatasheetsDownload SQD10N30-330H_4GE3 Datasheet PDFPDF Icon
Price for SQD10N30-330H_4GE3

Specification of SQD10N30-330H_4GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
330mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2190 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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