SQJ123ELP-T1_GE3

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Overview of SQJ123ELP-T1_GE3

Part NumberSQJ123ELP-T1_GE3
ManufacturerVishay / Siliconix
DescriptionAUTOMOTIVE P-CHANNEL 12 V (D-S)
DatasheetsDownload SQJ123ELP-T1_GE3 Datasheet PDFPDF Icon
Price for SQJ123ELP-T1_GE3

Specification of SQJ123ELP-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
238A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
11680 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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