SQJ262EP-T1_GE3

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Overview of SQJ262EP-T1_GE3

Part NumberSQJ262EP-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2 N-CH 60V POWERPAK SO8
DatasheetsDownload SQJ262EP-T1_GE3 Datasheet PDFPDF Icon
Price for SQJ262EP-T1_GE3

Specification of SQJ262EP-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs
35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 25V, 1260pF @ 25V
Power - Max
27W (Tc), 48W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK SO-8 Dual
Supplier Device Package
PowerPAK SO-8 Dual Asymmetric

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