SQJQ150E-T1_GE3

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Overview of SQJQ150E-T1_GE3

Part NumberSQJQ150E-T1_GE3
ManufacturerVishay / Siliconix
DescriptionAUTOMOTIVE N-CHANNEL 40 V (D-S)
DatasheetsDownload SQJQ150E-T1_GE3 Datasheet PDFPDF Icon
Price for SQJQ150E-T1_GE3

Specification of SQJQ150E-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
233A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4643 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
187W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 8 x 8
Package / Case
PowerPAK 8 x 8

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