SQV120N06-4M7L_GE3

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Overview of SQV120N06-4M7L_GE3

Part NumberSQV120N06-4M7L_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 60V 120A TO262-3
DatasheetsDownload SQV120N06-4M7L_GE3 Datasheet PDFPDF Icon
Price for SQV120N06-4M7L_GE3

Specification of SQV120N06-4M7L_GE3

Status
Obsolete
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
8800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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