SSM3J168F,LF

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Overview of SSM3J168F,LF

Part NumberSSM3J168F,LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 60V 400MA S-MINI
DatasheetsDownload SSM3J168F,LF Datasheet PDFPDF Icon
Price for SSM3J168F,LF

Specification of SSM3J168F,LF

Status
Active
Series
U-MOSVI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
82 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.2W (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3

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