SSM6J808R,LXHF

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Overview of SSM6J808R,LXHF

Part NumberSSM6J808R,LXHF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionAUTO AEC-Q SS MOS P-CH LOGIC-LEV
DatasheetsDownload SSM6J808R,LXHF Datasheet PDFPDF Icon
Price for SSM6J808R,LXHF

Specification of SSM6J808R,LXHF

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2V @ 100A
Gate Charge (Qg) (Max) @ Vgs
24.2 nC @ 10 V
Vgs (Max)
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP-F
Package / Case
6-SMD, Flat Leads

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