SSM6L820R,LXHF

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Overview of SSM6L820R,LXHF

Part NumberSSM6L820R,LXHF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionAUTO AEC-Q SS MOS N-CH + P-CH LO
DatasheetsDownload SSM6L820R,LXHF Datasheet PDFPDF Icon
Price for SSM6L820R,LXHF

Specification of SSM6L820R,LXHF

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V, 20V
Current - Continuous Drain (Id) @ 25C
4A (Ta)
Rds On (Max) @ Id, Vgs
39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.2nC @ 4.5V, 6.7nC @4.5V
Input Capacitance (Ciss) (Max) @ Vds
310pF @ 15V, 480pF @ 10V
Power - Max
1.4W (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
6-TSOP-F

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