SSR2N60BTM

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Overview of SSR2N60BTM

Part NumberSSR2N60BTM
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload SSR2N60BTM Datasheet PDFPDF Icon
Price for SSR2N60BTM

Specification of SSR2N60BTM

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-3 (DPAK)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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