STB12NM50ND

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Overview of STB12NM50ND

Part NumberSTB12NM50ND
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 500V 11A D2PAK
Price for STB12NM50ND

Specification of STB12NM50ND

Status
Obsolete
Series
FDmesh™ II
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
170 V
Current - Continuous Drain (Id) @ 25C
210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
285 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
18800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1150W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA

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