STD11N60M6

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Overview of STD11N60M6

Part NumberSTD11N60M6
ManufacturerSTMicroelectronics
DescriptionDISCRETE
Price for STD11N60M6

Specification of STD11N60M6

Status
Active
Package
Bulk
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.75V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10.3 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
387 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-PAK (TO-252)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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