STD7NM80-1

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Overview of STD7NM80-1

Part NumberSTD7NM80-1
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 800V 6.5A IPAK
DatasheetsDownload STD7NM80-1 Datasheet PDFPDF Icon
Price for STD7NM80-1

Specification of STD7NM80-1

Status
Obsolete
Series
MDmesh™
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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