STFW3N170

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Overview of STFW3N170

Part NumberSTFW3N170
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 1700V 2.6A ISOWATT
DatasheetsDownload STFW3N170 Datasheet PDFPDF Icon
Price for STFW3N170

Specification of STFW3N170

Status
Active
Series
PowerMESH™
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack

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