STI14NM50N

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Overview of STI14NM50N

Part NumberSTI14NM50N
ManufacturerSTMicroelectronics
DescriptionMOSFET N CH 500V 12A I2PAK
DatasheetsDownload STI14NM50N Datasheet PDFPDF Icon
Price for STI14NM50N

Specification of STI14NM50N

Status
Obsolete
Series
MDmesh™ II
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 100A
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
816 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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