STI24N60M2

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Overview of STI24N60M2

Part NumberSTI24N60M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 18A I2PAK
DatasheetsDownload STI24N60M2 Datasheet PDFPDF Icon
Price for STI24N60M2

Specification of STI24N60M2

Status
Active
Series
MDmesh™ II Plus
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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