STP12N65M2

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Overview of STP12N65M2

Part NumberSTP12N65M2
ManufacturerSTMicroelectronics
DescriptionPOWER MOSFET
DatasheetsDownload STP12N65M2 Datasheet PDFPDF Icon
Price for STP12N65M2

Specification of STP12N65M2

Status
Active
Series
MDmesh™ DM2
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16.7 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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