STQ2HNK60ZR-AP

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Overview of STQ2HNK60ZR-AP

Part NumberSTQ2HNK60ZR-AP
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 500MA TO92-3
DatasheetsDownload STQ2HNK60ZR-AP Datasheet PDFPDF Icon
Price for STQ2HNK60ZR-AP

Specification of STQ2HNK60ZR-AP

Status
Active
Series
SuperMESH™
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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