STS19N3LLH6

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Overview of STS19N3LLH6

Part NumberSTS19N3LLH6
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 30V 19A 8SO
DatasheetsDownload STS19N3LLH6 Datasheet PDFPDF Icon
Price for STS19N3LLH6

Specification of STS19N3LLH6

Status
Obsolete
Series
DeepGATE™, STripFET™ VI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 15 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.7W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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