STS9P2UH7

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Overview of STS9P2UH7

Part NumberSTS9P2UH7
ManufacturerSTMicroelectronics
DescriptionMOSFET P-CH 20V 9A 8SO
DatasheetsDownload STS9P2UH7 Datasheet PDFPDF Icon
Price for STS9P2UH7

Specification of STS9P2UH7

Status
Obsolete
Series
STripFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
STMicroelectronics
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
22.5mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
2390 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
2.7W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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