STU6N65K3

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Overview of STU6N65K3

Part NumberSTU6N65K3
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 5.4A IPAK
DatasheetsDownload STU6N65K3 Datasheet PDFPDF Icon
Price for STU6N65K3

Specification of STU6N65K3

Status
Obsolete
Series
SuperMESH3™
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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