STU9HN65M2

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Overview of STU9HN65M2

Part NumberSTU9HN65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 5.5A IPAK
Price for STU9HN65M2

Specification of STU9HN65M2

Status
Obsolete
Series
MDmesh™ M2
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11.5 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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