STW25N60M2-EP

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Overview of STW25N60M2-EP

Part NumberSTW25N60M2-EP
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CHANNEL 600V 18A TO247
Price for STW25N60M2-EP

Specification of STW25N60M2-EP

Status
Active
Series
MDmesh™ M2-EP
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
188mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4.75V @ 250A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
1090 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

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