STW68N65DM6

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Overview of STW68N65DM6

Part NumberSTW68N65DM6
ManufacturerSTMicroelectronics
DescriptionDISCRETE
Price for STW68N65DM6

Specification of STW68N65DM6

Status
Active
Package
Bulk
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
59mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
4.75V @ 250A
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
3528 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
431W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

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