SUD50N02-09P-GE3

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Overview of SUD50N02-09P-GE3

Part NumberSUD50N02-09P-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 20A TO252
DatasheetsDownload SUD50N02-09P-GE3 Datasheet PDFPDF Icon
Price for SUD50N02-09P-GE3

Specification of SUD50N02-09P-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
39.5W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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