SUM110N04-2M1P-E3

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Overview of SUM110N04-2M1P-E3

Part NumberSUM110N04-2M1P-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 40V 29A/110A TO263
DatasheetsDownload SUM110N04-2M1P-E3 Datasheet PDFPDF Icon
Price for SUM110N04-2M1P-E3

Specification of SUM110N04-2M1P-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
29A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
18800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 312W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (DPak)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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