SUP40N10-30-GE3

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Overview of SUP40N10-30-GE3

Part NumberSUP40N10-30-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 100V 38.5A TO220AB
Price for SUP40N10-30-GE3

Specification of SUP40N10-30-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
38.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 89W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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