TDTC123J,LM

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Overview of TDTC123J,LM

Part NumberTDTC123J,LM
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F BIAS RESISTOR BUILT-IN TRAN
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Price for TDTC123J,LM

Specification of TDTC123J,LM

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500A, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
320 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3

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