TJ200F04M3L,LXHQ

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Overview of TJ200F04M3L,LXHQ

Part NumberTJ200F04M3L,LXHQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 40V 200A TO220SM
DatasheetsDownload TJ200F04M3L,LXHQ Datasheet PDFPDF Icon
Price for TJ200F04M3L,LXHQ

Specification of TJ200F04M3L,LXHQ

Status
Active
Series
U-MOSVI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
460 nC @ 10 V
Vgs (Max)
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
1280 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
TO-220SM(W)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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