TJ8S06M3L,LXHQ

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Overview of TJ8S06M3L,LXHQ

Part NumberTJ8S06M3L,LXHQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 60V 8A DPAK
DatasheetsDownload TJ8S06M3L,LXHQ Datasheet PDFPDF Icon
Price for TJ8S06M3L,LXHQ

Specification of TJ8S06M3L,LXHQ

Status
Active
Series
U-MOSVI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
27W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
DPAK+
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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