TJ9A10M3,S4Q

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Overview of TJ9A10M3,S4Q

Part NumberTJ9A10M3,S4Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTJ9A10M3,S4Q
Price for TJ9A10M3,S4Q

Specification of TJ9A10M3,S4Q

Status
Active
Series
U-MOSVI
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
19W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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