TK110E65Z,S1X

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Overview of TK110E65Z,S1X

Part NumberTK110E65Z,S1X
ManufacturerToshiba Electronic Devices and Storage Corporation
Description650V DTMOS VI TO-220 110MOHM
DatasheetsDownload TK110E65Z,S1X Datasheet PDFPDF Icon
Price for TK110E65Z,S1X

Specification of TK110E65Z,S1X

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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