TK13E25D,S1X(S

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Overview of TK13E25D,S1X(S

Part NumberTK13E25D,S1X(S
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 250V 13A TO220-3
DatasheetsDownload TK13E25D,S1X(S Datasheet PDFPDF Icon
Price for TK13E25D,S1X(S

Specification of TK13E25D,S1X(S

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
102W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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