TK1K2A60F,S4X

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Overview of TK1K2A60F,S4X

Part NumberTK1K2A60F,S4X
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 600V 6A TO220SIS
DatasheetsDownload TK1K2A60F,S4X Datasheet PDFPDF Icon
Price for TK1K2A60F,S4X

Specification of TK1K2A60F,S4X

Status
Active
Series
U-MOSIX
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 630A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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