TK370A60F,S4X(S

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Overview of TK370A60F,S4X(S

Part NumberTK370A60F,S4X(S
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH
DatasheetsDownload TK370A60F,S4X(S Datasheet PDFPDF Icon
Price for TK370A60F,S4X(S

Specification of TK370A60F,S4X(S

Status
Active
Series
U-MOSIX
Package
Bulk
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
370mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.04mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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