TK4A65DA(STA4,Q,M)

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Overview of TK4A65DA(STA4,Q,M)

Part NumberTK4A65DA(STA4,Q,M)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 650V 3.5A TO220SIS
DatasheetsDownload TK4A65DA(STA4,Q,M) Datasheet PDFPDF Icon
Price for TK4A65DA(STA4,Q,M)

Specification of TK4A65DA(STA4,Q,M)

Status
Active
Series
π-MOSVII
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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