TK4R3A06PL,S4X

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Overview of TK4R3A06PL,S4X

Part NumberTK4R3A06PL,S4X
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 60V 68A TO220SIS
DatasheetsDownload TK4R3A06PL,S4X Datasheet PDFPDF Icon
Price for TK4R3A06PL,S4X

Specification of TK4R3A06PL,S4X

Status
Active
Series
U-MOSIX-H
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 500A
Gate Charge (Qg) (Max) @ Vgs
48.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3280 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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