TK60F10N1L,LXGQ

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Overview of TK60F10N1L,LXGQ

Part NumberTK60F10N1L,LXGQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 100V 60A TO220SM
Price for TK60F10N1L,LXGQ

Specification of TK60F10N1L,LXGQ

Status
Active
Series
U-MOSVIII-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3.5V @ 500A
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4320 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
205W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
TO-220SM(W)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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