TK6R9P08QM,RQ

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Overview of TK6R9P08QM,RQ

Part NumberTK6R9P08QM,RQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionUMOS10 DPAK 80V 6.9MOHM
DatasheetsDownload TK6R9P08QM,RQ Datasheet PDFPDF Icon
Price for TK6R9P08QM,RQ

Specification of TK6R9P08QM,RQ

Status
Active
Series
U-MOSX-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
3.5V @ 500A
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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