TK7S10N1Z,LQ

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Overview of TK7S10N1Z,LQ

Part NumberTK7S10N1Z,LQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 100V 7A DPAK
DatasheetsDownload TK7S10N1Z,LQ Datasheet PDFPDF Icon
Price for TK7S10N1Z,LQ

Specification of TK7S10N1Z,LQ

Status
Active
Series
U-MOSVIII-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
48mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 100A
Gate Charge (Qg) (Max) @ Vgs
7.1 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK+
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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