TK9P65W,RQ

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Overview of TK9P65W,RQ

Part NumberTK9P65W,RQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 650V 9.3A DPAK
DatasheetsDownload TK9P65W,RQ Datasheet PDFPDF Icon
Price for TK9P65W,RQ

Specification of TK9P65W,RQ

Status
Active
Series
DTMOSIV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
560mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 350A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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