TN0106N3-G-P003

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Overview of TN0106N3-G-P003

Part NumberTN0106N3-G-P003
ManufacturerMicrochip Technology
DescriptionMOSFET N-CH 60V 350MA TO92-3
DatasheetsDownload TN0106N3-G-P003 Datasheet PDFPDF Icon
Price for TN0106N3-G-P003

Specification of TN0106N3-G-P003

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 500A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

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