TN2130MF-G-VAO

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Overview of TN2130MF-G-VAO

Part NumberTN2130MF-G-VAO
ManufacturerMicrochip Technology
DescriptionMOSFET, N-CHANNEL ENHANCEMENT-MO
Price for TN2130MF-G-VAO

Specification of TN2130MF-G-VAO

Status
Active
Package
Tape & Reel (TR)
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25C
85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta)
Operating Temperature
-55C ~ 150C (TA)
Mounting Type
Surface Mount
Supplier Device Package
6-DFN (2x2)
Package / Case
6-VDFN Exposed Pad

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