TN5325N3-G-P002

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Overview of TN5325N3-G-P002

Part NumberTN5325N3-G-P002
ManufacturerMicrochip Technology
DescriptionMOSFET N-CH 250V 215MA TO92-3
DatasheetsDownload TN5325N3-G-P002 Datasheet PDFPDF Icon
Price for TN5325N3-G-P002

Specification of TN5325N3-G-P002

Status
Active
Package
Tape & Reel (TR)
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
215mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
740mW (Ta)
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

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