TP65H150LSG

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Overview of TP65H150LSG

Part NumberTP65H150LSG
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 15A 3PQFN
DatasheetsDownload TP65H150LSG Datasheet PDFPDF Icon
Price for TP65H150LSG

Specification of TP65H150LSG

Status
Obsolete
Package
Tube
Supplier
Transphorm
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.8V @ 500A
Gate Charge (Qg) (Max) @ Vgs
7.1 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
576 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN

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